general purpose t ransistors pnp silicon maximum r atings rating symbol value unit collector?emitter voltage v ceo ?50 v collector?base voltage v cbo ?60 v emitter?base voltage v ebo ?6.0 v collector current ? continuous i c ?150 madc collector power dissipation p c 0.2 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c device marking 2sa1037akql t1 =fq 2sa1037akslt1 =g3f 2sa1037akrlt1 =fr electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit collector?emitter breakdown voltage v (br)ceo ? 50 ? ? v (i c = ?1 ma) emitter?base breakdown voltage v (br)ebo ? 6 ? ? v (i e = ? 50 a) collector?base breakdown voltage v (br)cbo ? 60 ? ? v (i c = ? 50 a) collector cutoff current i cbo ? ? ? 0.1 a (v cb = ? 60 v) emitter cutoff current i ebo ? ? ? 0.1 a (v eb = ? 6 v) collector-emitter saturation voltage v ce(sat) ? ? -0.5 v (i c / i b = ? 50 ma / ? 5m a) dc current transfer ratio h fe 120 ?? 560 ?? (v ce = ? 6 v, i c = ?1ma) transition frequency f t ? 140 ?? mhz (v ce = ? 12 v, i e = 2ma, f=30mhz ) output capacitance c ob ? 4.0 5.0 pf (v cb = ? 12 v, i e = 0a, f =1mhz ) h fe values are classified as follows: qrs hfe 120~270 180~390 270~560 sotC 23 2 emitter 3 collector 1 base * featrues z ordering information device package shipping 2SA1037AKXLT1 3000/tape & reel sot-23 we declare that the material of product compliance with rohs requirements. 2012- willas electronic corp. 2SA1037AKXLT1
?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2 ?1.4 ?1.6 t a = 100c 25c ? 40c ?50 ?20 ?10 ?50 ?2 ?1 ?0.5 ?0.2 ?0.1 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 t a = 25c ?10 ?8 ?6 ?4 ?2 0 i c , collector current (ma) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics( ) fig.3 grounded emitter output characteristics( ) fig.4 dc current gain vs. collector current ( ) fig.5 dc current gain vs. collector current ( ) fig.6 collector-emitter saturation voltage vs. collector current ( ) v ce = ?10 v v be , base to emitter voltage(v) i c , collector current (ma) v ce , collector to emitter voltage (v) ?35.0 ?31.5 ?28.0 ?24.5 ?21.0 ?17.5 ?14.0 ?10.5 ?7.0 ?3.5 a i b =0 0 ? 1? 2 ? 3 ? 4? 5 t a = 25c ?100 ?80 ?60 ?40 ?20 0 i c , collector current (ma) v ce , collector to emitter voltage (v) ?250 ?200 ?150 500 450 400 350 300 ?100 ?50 a i b =0 t a = 25c 500 200 100 50 h fe , dc current gain v ce = ?5 v ?3v ?1v i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 t a = 100c 500 200 100 50 h fe , dc current gain v ce = ? 6v i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 25c ?40c ?1 ?0.5 ?0.2 ?0.1 ?0.05 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 t a = 25c i c /i b = 50 20 10 2012- willas electronic corp. general purpose transistors 2SA1037AKXLT1
fig.7 collector-emitter saturation voltage vs. collector current ( ) ?1 ?0.5 ?0.2 ?0.1 ?0.05 v ce(sat) , collector saturation voltage(v) i c , collector current (ma) ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 t a = 100c 25c ?40c i c /i b = 10 fig.8 gain bandwidth product vs. emitter current 1000 500 200 100 50 f r , transition frequency(mhz) i e , emitter current (ma) ?0.2 ?0.5 ?1 ?2 ? 5 ?10 ?20 ?50 ?100 t a = 25c v ce = ?12v fig.9 collector output capacitance vs.collector-base voltage emitter inputcapacitance vs. emitter-base voltage 20 10 5 2 c ob , collector output capacitance( pf) c ib , emitter input capacitance (pf) v cb , collector to base voltage (v) v eb , emitter to base voltage (v) ?0.5 ?1 ?2 ?5 ?10 ?20 t a = 25c f =1mhz i e = 0a i c = 0a c ib c ob 2012- willas electronic corp. general purpose transistors 2SA1037AKXLT1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012- willas electronic corp. general purpose transistors 2SA1037AKXLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
|
